Coating processes – Optical element produced – Polarizer – windshield – optical fiber – projection screen – or...
Reexamination Certificate
2005-05-03
2005-05-03
Talbot, Brian K. (Department: 1762)
Coating processes
Optical element produced
Polarizer, windshield, optical fiber, projection screen, or...
C427S574000, C427S578000, C427S579000, C427S167000
Reexamination Certificate
active
06887514
ABSTRACT:
To deposit optical quality films by PECVD (Plasma Enhanced Chemical Vapor Deposition), a six-dimensional space wherein five dimensions thereof correspond to five respective independent variables of which a set of four independent variables relate to the flow-rate of respective gases, a fifth independent variable relates to total pressure, and a six dimension relates to observed FTIR characteristics is first created. Then an optical film is deposited while maintaining three of the set of four independent variables substantially constant as well as the fifth independent variable, and varying a fourth of the set of four independent variables to obtain desired characteristics in the sixth dimension.
REFERENCES:
patent: 4236905 (1980-12-01), Dabby et al.
patent: 4394401 (1983-07-01), Shioya et al.
patent: 5409743 (1995-04-01), Bouffard et al.
patent: 5660895 (1997-08-01), Lee et al.
patent: 5834796 (1998-11-01), Matsuda et al.
patent: 5861197 (1999-01-01), Law et al.
patent: 5885881 (1999-03-01), Ojha
patent: 6130172 (2000-10-01), Fuller et al.
patent: 6537623 (2003-03-01), Ouellet et al.
patent: 6670695 (2003-12-01), Gau et al.
patent: 0 788 148 (1997-08-01), None
patent: 1 134 073 (2001-09-01), None
patent: 279303 (1987-12-01), None
patent: 03274272 (1991-12-01), None
patent: 10319263 (1998-12-01), None
patent: WO 9725636 (1997-07-01), None
Hsieh et al., “Characteristics of low-temperature and low-enenergy plasma-enhanced chemical vapor deposited SiO2”, Journal Applied Physics 74 (4), Aug. 15, 1993, pp. 2638-2648.*
Kim, Kihong, et al., “Properties of low dielectric constant fluorinated silicon oxide films prepared by plasma enhanced chemical vapor deposition”, Thin Solid Films, 1998, vol. 332, No. 1/2, pp. 369-374.
Takamatsu, Akira et al., “Plasma-activated deposition and properties of phosphosilicate glass film”, Journal of Electrochemical Society, 1984, vol. 131, No. 8, pp. 1865-1870.
D.K.W. Lam, “Low temperature plasma chemical vapor deposition of silicon oxynitride thin-film waveguides”, Applied Optics, vol. 23, No. 16, Aug. 15, 1984, pp, 27442746.
Franco Bruno et al., “Plasma-enhanced chemical vapor deposition of low-loss SiON optical waveguides at 1.5-μm wavelength”, Applied Optics, vol. 30, No. 31, Nov. 1, 1991, pp. 4560-4564.
K. Imoto, et al., “High refractive index difference and low loss optical waveguide fabricated by low temperature processes”, Electronics Letters, vol. 29, No. 12, Jun. 10, 1993, pp. 1123-1124.
Q. Lai et al., “Simple technologies for fabrication of low-loss silica waveguides”, Electronics Letter, Mar. 31, 1992.
Yuan-Kuang Tu, et al., “Single-mode SiON/SiON2/Si Optical Waveguides Prepared by Plasma-Enhanced Chemical Vapor Deposition”, Fiber and Integrated Optics, vol. 14, pp. 133-139.
S. Yokoyama et al., “Optical waveguides on silicon chips”, J.Vac. Sci. Technol. A13(3), May/Jun. 1995, pp. 629-635.
O.P. Agnihotri et al., “Silicon Oxynitirde Waveguides for Optoelectronic Integrated Circuits”, Jpn. Appl., vol. 36, Part 1, No. 11, Nov. 1997, pp. 6711-6713.
Daniel P. Poenar et al., “Optical properties of thin-film silicon-compatible materials”, Applied Optics, vol. 36, No. 21, Jul. 20, 1997, pp. 5122-5128.
I. Pereyra et al., “High quality low temperature DPECVD silicon dioxide”, Journal of Non-Crystalline Solids, 212, 1997, pp. 225-231.
M.I. Alayo, et al., “Thick SiOxNyand SiO2films obtained by PECVD techniques at low temprature”, Thin Film Solids, 332, 1998, pp. 40-45.
R. German et al., “Silicon-Oxynitride Layer for Optical Waveguide Applications”, The Electronic Society Inc., vol. 99-1, May 199, Abstract No. 137.
K. Worhoff et al., “Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics”, Sensor and Actuators, 74, 1999, pp. 9-12.
A.J. Kenyon et al., “A luminescence study of silicon-rich silica and rare-earth doped silicon-rich silica”, Electrochemical Society Proceedings vol. 91-11, pp. 304-318.
M. Hoffmann et al., “Low temprature, nitrogen doped waveguides on silicon with small core dimensions fabricated by PECVD/RIE”, Waveguide Technology, WeC2, pp. 299-301.
M. Hoffmann et al., Low-Loss Fiber-Matched Low-Temperature PECVD Waveguides with Small-Core Dimensions for Optical Communications Systems, IEEE Photonics Technology Letters, vol. 9, No. 9, Sep. 1997, pp. 1238-1240.
K. Kapser et al., Rapid Deposition of High-Quality Silicon-Oxynitride Waveguides, IEEE Transactions Photonics Technology Letters, vol. 3, No. 12, Dec. 1991, pp. 1096-1098.
D.A.P. Bulla et al., “Deposition of thick TEOS PECVD silicon oxide layers for integrated optical waveguide applications”, Thin Solid Films, 334, 1998, pp. 60-64.
E.S. Bulat et al., “Fabrication of waveguides using low-temperature plasma processing techniques”, J. Vac. Sci. Techol. A 11(4) Jul./Aug. 1993, pp. 1268-1274.
M.V> Bazylenko et al. Fabrication of Low-Temperature PECVD Channel Waveguides with Significantly Improved Loss in the 1.50-1.55-μm Wavelength Range, IEE Photonics Technology Letters, vol. 7, No. 7, Jul. 1995, pp. 774-776.
M.V. Bazylenko et al., “Pure and fluorine-doped silica films deposited in a hollow cathode reactor for integrated optic applications”, J. Vac. Sci. Technol. A 14(2), Mar./Apr. 1996, pp. 336-345.
A. Durandet et al., “Silica buried channel waveguides fabricated at low temperature using PECVD”, Electronics Letters, vol. 32, No. 4, Feb. 15, 1996, pp. 326-327.
R.W. Boswell et al., “Deposition of silicon dioxide films using the helicon diffusion reactor for integrated optics applications”, Plasma Processing of Semiconductors, 1997, pp. 433-475.
S. Valette et al., New Integrated Optical Multiplexer-Demultiplexer Realized on Silicon Substrate, ECIO87, May 1987, pp. 145-147.
S. Valette, “State of the art of integrated optics technology at LETI for achieving passive optical components”, Journal of Modern Optics, vol. 35, No. 6, 1998, pp. 993-1005.
G. Grand et al., “Low-Loss PECVD Silica Channel Waveguides for Optical Communications”, Electronic Letters, vol. 26, No. 25, Dec. 6, 1990, pp. 2135-21-37.
S.M. Ojha et al., “Simple method of fabricating polarisation-insensitive and very low crosstalk AWG grating devices”, Electronic Letters, vol. 34, No. 1, Jan. 8, 1998, pp. 78-79.
C.M. Johnson et al., “Thermal annealing of waveguides formed by ion implantation of silica-on-Si”, Nuclear Instruments and Methods in Physics Research B 141, 1998, pp. 670-674.
Karen Liu et al., “Hybrid optoelectronic digitally tunable receiver”, SPIE, vol. 2402, pp. 104-114.
Rene M. de Ridder et al., “Silicon Oxynitride Planar Waveguiding Structure for Application in Optical Communication”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 6, Nov./Dec. 1998, pp. 930-936.
B.J. Offrein, “Wavelength Tunable Optical Add-After-Drop Filter with Flat Passband for WDM Networks”, IEEE Photonics Technology Letters, vol. 11, No. 2, Feb. 1999, pp. 239-241.
Hseih, S.W. et al: Characteristics of Low-Temperature and Low-Energy Plasma Enhanced Chemical Vapor Deposited SIO2, Aug. 1993, 2638-2648, vol. 74, No. 4, American Institute of Physics, Republic of China.
Kim, Kihong, et al.: Properties if Low Dielectric Constant Fluorinated Silicon Oxide Films Prepared by Plasma Enhanced Chemical Vapor Deposition, 1998, 369-374, Elsevier Science S.A., Baton Rouge, LA.
Grand, G. et al.: Low-Loss PECVD Silica Channel Waveguides For Optical Communications, Electronic Letters, Dec. 6, 1990, vol. 26, No. 25, France.
Blain Stephane
Grondin Manuel
Lachance Jonathan
Ouellet Luc
(Marks & Clerk)
Dalsa Semiconductor Inc.
Mitchell Richard J.
Talbot Brian K.
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