Method of depositing nitrogen-doped beta tantalum

Details Method of depositing nitrogen-doped beta tantalum Method of depositing nitrogen-doped beta tantalum

1972-12-15

1976-12-28

Vertiz, Oscar R.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

C01C 1500

Patent

active

040000559

ABSTRACT:
A method for forming a nitrogen doped-beta tantalum thin film which comprises sputtering tantalum in a nitrogen atmosphere such that the ratio of tantalum atoms to nitrogen atoms in the deposited film ranges from about 9/1 to about 999/1. Such films are useful in the fabrication of thin-film capacitors.

REFERENCES:
patent: 3258413 (1966-06-01), Pendergast
patent: 3664931 (1972-05-01), Gerstenberg
patent: 3714013 (1973-01-01), Rairden
A. H. Beck and M. Densham, Vacuum, vol. 21, No. 5, "Addendum, A simple apparatus for DC bias sputtering, Apr. 5, 1971, p. 178.
Axelrod et al., Journal of the Electrochemical Society, vol. 116, Apr. 1969, pp. 460 to 465.
F. Vratney et al., Electrochemical Technology, vol. 5, p. 283 (1967).
D. Gerstenberg et al., Proceedings Electronic Components Conference, Washington, D. C. (1967).

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