Method of depositing microcrystalline solid particles from the g

Details Method of depositing microcrystalline solid particles from the g Method of depositing microcrystalline solid particles from the g

1990-08-17

1992-04-07

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 46, 4272481, 427249, 4272551, 4272552, 427 38, 427314, B05D 302, B05D 306, C23C 1600

Patent

active

051026899

ABSTRACT:
Method of depositing microcrystalline solid bodies from the gas phase by means of Chemical Vapor Deposition (CVD) in which the solid particles are deposited on a substrate heated to a temperature ranging between 450.degree. and 1200.degree. C. at a pressure ranging between 10.sup.-5 and 1 bar and at a directed gas flow, in which method the reactant gas is passed through a porous intermediate body having a thickness of between 2 and 30 mm of a material suitable for use at temperatures up to 2500.degree. C., which intermediate body is present in the zone having the maximum energy content within the reactor, while the reactant gas is excited in said intermediate body, whereafter the solid particles are deposited on the substrate.

REFERENCES:
patent: 4647512 (1987-03-01), Venkataramanan et al.
Matsumoto et al., "Synthesis of diamond films in a rf induction thermal plasma", Appl. Phys. Lett. 51(10) Sep. 1987 pp. 737-739.

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