Method of depositing metal fluoride

Details Method of depositing metal fluoride Method of depositing metal fluoride

1990-11-30

1992-05-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437245, 423490, 423497, 427 99, 427227, C23C 1622

Patent

active

051167859

ABSTRACT:
A method for forming a layer of a Group II or III fluoride on a semiconductor substrate (e.g. as epitaxial insulating layer) comprising vaporizing a precursor (I), where M is Be, Ca, Sr, Ba or lanthanide, b and d are 0 or 1. A, B, C and D are independently (IIA) or (IIB), X being O, S, NR, PR where R is H, alkyl, perfluoroalkyl; Y is perfluoroalkyl, fluoroalkenyl, fluoroalkylamine or fluoroalkenylamine; Z is H, F, alkyl, perfluoroalkyl or perfluoroalkenyl; and then decomposing the precursor vapor to form M fluoride. A preferred precursor for calcium fluoride is calcium 1,1,1,5,5,5-hexafluor-2,4-pentanedione complex where b and d are 0.

REFERENCES:
patent: 4718929 (1988-01-01), Power et al.

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