Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2005-09-27
2005-09-27
Kim, Paul D. (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603130, C029S603140, C029S606000, C216S062000, C216S065000, C216S066000, C360S122000, C360S125330, C360S317000, C427S127000, C427S128000, C451S005000, C451S041000
Reexamination Certificate
active
06948231
ABSTRACT:
The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed layers are deposited using ion beam deposition. The substrate is electroplated with metal filling the trenches with metal. The substrate is chemical mechanical polished to remove excess metal and planarize the air bearing surface of the write head.
REFERENCES:
patent: 4933209 (1990-06-01), Anthony et al.
patent: 5178739 (1993-01-01), Barnes et al.
patent: 5566442 (1996-10-01), Gaud et al.
patent: 5871622 (1999-02-01), Pinarbasi
patent: 5936813 (1999-08-01), Kim et al.
patent: 5962923 (1999-10-01), Xu et al.
patent: 6086727 (2000-07-01), Pinarbasi
patent: 6105238 (2000-08-01), Chesnutt et al.
patent: 6136707 (2000-10-01), Cohen
patent: 6452742 (2002-09-01), Crue et al.
patent: 6500762 (2002-12-01), Hashim et al.
patent: 6758947 (2004-07-01), Chiang et al.
patent: 2000323568 (2000-11-01), None
“Time domain network analysis of write head coil impedance”; Dakroub, H.; Magnetics, IEEE Transactions on , vol.: 37 , Issue: 2 , Mar. 2001; pp.: 1049-1051.
Broadbent et al., “Experimental and Analytical Study of Seed Layer Resistance for Copper Damascene Electroplating,” J. Vac. Sci. Technol. B 17(6) Nov./Dec. 1999, pp. 2584-2595.
Hsiao Richard
Le Quang
Nguyen Paul P.
Nguyen Son Van
Pinarbasi Mustafa
Crawford & Maunu PLLC
International Business Machines - Corporation
Kim Paul D.
LandOfFree
Method of depositing material into high aspect ratio features does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of depositing material into high aspect ratio features, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of depositing material into high aspect ratio features will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3398421