Method of depositing low stress hafnium thin films

Details Method of depositing low stress hafnium thin films Method of depositing low stress hafnium thin films

1976-09-20

1977-11-01

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

17910041G, 274 38, 428469, 358256, C23C 1500, B32B 900

Patent

active

040564576

ABSTRACT:
By radio frequency sputtering hafnium films on an alumina or sapphire substrate at high deposition rates and minimum substrate target bias, improved adhesion of the hafnium films to the substrate is obtained.

REFERENCES:
patent: 3647662 (1972-03-01), Gerstenberg et al.
F. Huber et al., "Thin Film Hafnium-Hafnium Dioxide Capacitors," Proc. IEEE Components Conf, (1966), pp. 324-334.
F. T. J. Smith, "Structure & Electrical Properties of Sputtered Films of Hafnium & Hafnium Compounds," J. Appl. Phys, vol. 41, pp. 4227-4231, (1970).
M. T. Thomas, "Preparation & Properties of Sputtered Hafnium & Anodic HfO.sub.2 Films," J. Electrochem. Soc., vol. 117, pp. 396-403, (1970).

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