Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-08-27
1981-03-03
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29571, 148174, 156605, 156612, 252 623GA, 357 58, 357 63, 357 64, H01L 21205, H01L 21322
Patent
active
042538874
ABSTRACT:
A method of depositing a layer of semi-insulating gallium arsenide on a substrate by vapor phase epitaxy. The layer is deposited by thermally decomposing a gaseous mixture of arsine, gallium chloride and a small amount of water vapor to deposit a layer of gallium arsenide doped with oxygen.
REFERENCES:
patent: 407651 (1978-02-01), James
patent: 3461004 (1969-08-01), Lochner et al.
patent: 3533967 (1970-10-01), McNeely et al.
patent: 3657615 (1972-04-01), Driver
patent: 3716405 (1973-02-01), Lim
patent: 3758348 (1973-09-01), Whigham et al.
patent: 3836408 (1974-09-01), Kasano
patent: 3994755 (1976-11-01), Kamath et al.
patent: 4004953 (1977-01-01), Otsubo et al.
Tietjen et al., "Vapor-Phase Growth . . . .III-V . . . Semiconductor", Solid State Tech., Oct. 1972, pp. 42-49.
Lawley, K. L., "Vapor Growth . . . Ga Ae . . . Hydrogen-Water Vapor Process", J. Electrochem. Soc., vol. 113, No. 3, Mar. 1966, pp. 240-245.
Tietjen et al., "An All-in-One Process for Building Junctions", Electronics, Nov. 13, 1967, pp. 113-115.
Palm et al., "Effect of Oxygen Injection . . . VPE . . . Ga Aa Films", J. Electronic Mat'ls., vol. 8, No. 5, 1979, pp. 555-570.
Weiner, M., "Si Contamination . . . . Growth of Ga Ar & Ga P", J. Electrochem. Soc., vol. 119, No. 4, Apr. 1972, pp. 496-504.
Tietjen et al., "Prep. & Properties of . . Ga Aa P . . . . Arsine . . . ", Ibid., vol. 113, No. 7, Jul. 1966, pp. 724-728.
Gottlieb et al., "Epitaxial Growth of Ga Aa Using Water Vapor", R.C.A. Review, Dec. 1963, pp. 585-595.
Cohen Donald S.
Dean R.
Morris Birgit E.
RCA Corporation
Saba W. G.
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