Method of depositing insulating layer on underlying layer using

Details Method of depositing insulating layer on underlying layer using Method of depositing insulating layer on underlying layer using

1991-08-20

1993-07-27

Fourson, George

Fishing, trapping, and vermin destroying

437238, 437241, 437978, 437245, 427571, H01L 21203

Patent

active

052310574

ABSTRACT:
A method for producing a semiconductor device includes the steps of forming a patterned wiring line on a first insulating layer, and depositing a second insulating layer on the patterned wiring line and the first insulating layer by a plasma-assisted CVD process in which a pulse-modulated plasma is generated and a gas containing hydrogen is used.

REFERENCES:
patent: 4500563 (1985-02-01), Ellenberger et al.
patent: 4837185 (1989-06-01), Yau et al.
Olmer et al., "Intermetal dielectric deposition by plasma enhanced chemical vapor deposition," Fifth IEEE/CHMT International Electronic Manufacturing Technology Symposium, Lake Buena Vista, Fla., Oct. 10-12, 1988, pp. 98-99.

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