Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1978-03-15
1979-04-03
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148 15, 156610, 156643, 204192N, 204192S, 204192EC, 204298, H01L 21203, H01L 2126, C23C 1500
Patent
active
041475739
ABSTRACT:
A method of producing a compound semiconductor wafer which comprises cleaning the surface of a monocrystalline substrate of a group-IV element semiconductor by ion beam etching in a high vacuum, separately evaporating materials consisting of or containing the component elements of a desired compound semiconductor, jetting the vapors of the component elements into the high vacuum region to form clusters, ionizing the clusters to form cluster ions, and accelerating the cluster ions to make them impinge on the substrate so that an epitaxial layer of the desired compound semiconductor may be formed on the substrate.
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patent: 3912826 (1975-10-01), Kennedy
patent: 3974059 (1976-08-01), Murayama
patent: 4013533 (1977-03-01), Cohen-Solal et al.
patent: 4066527 (1978-01-01), Takagi et al.
Takagi et al., "Ionized-Cluster Beam Deposition", J. Vac. Sci. Technol., vol. 12, No. 6, Nov./Dec. 1975, pp. 1128-1134.
Futaba Denshi Kogyo K. K.
Rutledge L. Dewayne
Saba W. G.
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