Method of depositing Ge-Sb-Te thin film

Details Method of depositing Ge-Sb-Te thin film Method of depositing Ge-Sb-Te thin film

2006-08-22

2011-10-04

Gambetta, Kelly M (Department: 1715)

Coating processes

Coating by vapor, gas, or smoke

C427S569000, C427S255230, C427S255350, C427S255290

Reexamination Certificate

active

08029859

ABSTRACT:
There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.

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