Method of depositing fluorinated silicon nitride

Details Method of depositing fluorinated silicon nitride Method of depositing fluorinated silicon nitride

1990-07-31

1991-09-03

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 4272552, 4272551, 427255, B05D 306

Patent

active

050453467

ABSTRACT:
Method of forming a fluorinated silicon nitride film on a semiconductor substrate by first forming a coating of ammonium hexafluorosilicate on the electrode of a plasma reactor to serve as a source of fluorine during the silicon nitride deposition procedure. The ammonium hexafluorosilicate coating is formed by generating a plasma of carbon tetrafluoride and oxygen within the reactor, then a plasma of nitrogen, followed by a plasma of silane and helium with nitrogen. The substrate is then placed in the reactor and a plasma employing silane and helium together with nitrogen is generated at low RF frequency to produce a fluorinated silicon nitride film on the substrate.

REFERENCES:
patent: 4514437 (1985-04-01), Nath
patent: 4960656 (1990-10-01), Chang et al.
C.-P. Chang Chang et al., Fluorinated Chemistry for High-Quality Low Hydrogen Plasma-Depositte Silicon Nitride Films, J. Appl. Phys. 62(4), Aug. 15, 1987, pp. 1406-1415.
S. Fujita et al., Electrical Properties of Silicon Nitride Films Plasma-Deposited from SIF.sub.4, N.sub.2, and H.sub.2 Source Gases, J. Appl. Phys. 57(2), Jan. 1985, pp. 426-431.

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