Method of depositing elemental amorphous silicon

Details Method of depositing elemental amorphous silicon Method of depositing elemental amorphous silicon

1975-12-29

1978-01-10

Kendall, Ralph S.

Coating processes

Electrical product produced

Condenser or capacitor

148174, 357 63, 423348, 423349, 423350, 427 82, 427248B, C23C 1300, C01B 3302, C23C 1102

Patent

active

040680207

ABSTRACT:
A smooth surfaced amorphous silicon layer useful in semiconductor technology is produced by pyrolytic deposition of elemental silicon onto a heated mandrel along with simultaneous pyrolytic deposition of at least one other element selected from Groups IV through VIII and which is non-semiconductive and does not function as a conductivity determining dopant.

REFERENCES:
patent: 3446653 (1969-05-01), Reuschel
patent: 3461359 (1969-08-01), Raithet
patent: 3476640 (1969-11-01), Sirtl
patent: 3485684 (1969-12-01), Mann
patent: 3725148 (1973-04-01), Kendall
patent: 3734770 (1973-05-01), Price
patent: 3836999 (1974-09-01), Nishizawa
patent: 3862852 (1975-01-01), Kamins
patent: 3930067 (1975-12-01), Gorrissen

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