Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1982-08-11
1984-01-03
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
204192SP, C23C 1500
Patent
active
044241011
ABSTRACT:
A method of depositing refractory metal silicides in a sputtering system on one or more substrates in an environment which supports a glow discharge from a pair of targets at an energy level sufficient to co-sputter and deposit the material from the targets onto the substrate(s). The method includes either a RF high voltage to be applied to one of the targets, or a DC voltage in the presence of a magnetic field to be applied to both targets so as to deposit silicon, either doped or pure, and refractory metal, either doped or pure, as the case may be, to provide a thin film of doped refractory metal silicide on the substrate(s).
REFERENCES:
patent: 4322453 (1982-03-01), Miller
E. Kay et al., "Controlled Sputtering Process", IBM Tech. Disc. Bull., vol. 12, p. 1358 (1970).
S. Inoue et al., "Phosphorus Doped Molybdenum Silicide Technology for LSI Applications", Int'l. Electron Devices Meeting Tech. Dig. (Wash. DC), 1980, pp. 152-155.
S. P. Murarka et al., "Silicide Formation in Thin Cosputtered (Ti & Si) Films on Polycrystalline Si and SiO.sub.2 ", J. Appl. Phys., vol. 51, pp. 350-356 (1980).
Dwyer J. R.
Masselle F. L.
Murphy T. P.
The Perkin-Elmer Corp.
Weisstuch Aaron
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