Method of depositing doped amorphous semiconductor on a substrat

Details Method of depositing doped amorphous semiconductor on a substrat Method of depositing doped amorphous semiconductor on a substrat

1980-12-15

1982-09-07

Newsome, John H.

Coating processes

Electrical product produced

Welding electrode

427 85, 427 86, C23C 1702

Patent

active

043484280

ABSTRACT:
A method of depositing a doped amorphous semiconductor on a base material including the steps of subjecting the base to an environment including a semiconductor gas such as silane or germane, a dopant gas such as arsine, phosphine, or diborane, and mercury vapor, and exposing the base in such environment to ultraviolet radiation to effect decomposition of the semiconductor and dopant materials onto the base.

REFERENCES:
patent: 3271180 (1966-09-01), White
patent: 3620827 (1971-11-01), Cooleg
patent: 3661637 (1972-05-01), Sirtl
patent: 4181751 (1980-01-01), Hall et al.
patent: 4200473 (1980-04-01), Carlson
patent: 4260649 (1981-04-01), Dension et al.
Brodsky et al., "IBM Tech. Disc. Bull.", V. 22, No. 8A, Jan. 1980, pp. 3391-3392.

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