Method of depositing dielectric

Details Method of depositing dielectric Method of depositing dielectric

2005-08-30

2005-08-30

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

C438S400000

Reexamination Certificate

active

06936481

ABSTRACT:
This invention relates to a method of depositing dielectric on a semiconductor substrate to form part of a capacitor. The method includes reactive sputtering a metal oxide layer from a target of metal onto the substrate wherein the support is biased to induce a DC voltage across the depositing dielectric as it forms. The voltage may be in the range of 200-300V.

REFERENCES:
patent: 4002545 (1977-01-01), Fehiner et al.
patent: 4959745 (1990-09-01), Suguro
patent: 5078846 (1992-01-01), Miller et al.
patent: 5180476 (1993-01-01), Ishibashi et al.
patent: 5185689 (1993-02-01), Maniar
patent: 5286531 (1994-02-01), Krug et al.
patent: 5559058 (1996-09-01), Zory et al.
patent: 5789071 (1998-08-01), Sproul et al.
patent: 5942089 (1999-08-01), Sproul et al.
patent: 6075691 (2000-06-01), Duenas et al.
patent: 6171872 (2001-01-01), Lowrey et al.
patent: 6211035 (2001-04-01), Moise et al.
patent: 6246076 (2001-06-01), Lipkin et al.
patent: 6266230 (2001-07-01), Kato et al.
patent: 6291867 (2001-09-01), Wallace et al.
patent: 6319766 (2001-11-01), Bakli et al.
patent: 6346427 (2002-02-01), Gardner et al.
patent: 6407420 (2002-06-01), Yamanaka et al.
patent: 6537428 (2003-03-01), Xiong et al.
patent: 6622059 (2003-09-01), Toprac et al.
patent: 6624462 (2003-09-01), Kohara et al.
patent: 6730955 (2004-05-01), Shinohara et al.
patent: 0 691 419 (1996-01-01), None
patent: 2000-82630 (2000-03-01), None

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