Method of depositing diamond and diamond light emitting device

Details Method of depositing diamond and diamond light emitting device Method of depositing diamond and diamond light emitting device

1994-10-13

1996-03-19

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 17, 257 34, 257 12, 257131, 257102, 257590, H01L 310312

Patent

active

055005390

ABSTRACT:
A method of depositing high quality diamond films and a light emitting device are described. The deposition is carried out in a reaction chamber. After disposing a substrate to be coated in the chamber, a carbon compound gas including a C--OH bond is introduced together with hydrogen thereinto. Then, deposition of diamond takes place in a magnetic field by inputting microwave energy. The present invention is particularly characterized in that the volume ratio of the carbon compound to hydrogen introduced into the reaction chamber is 0.4 to 2; the pressure in said reaction chamber is 0.01 to 3 Torr; the temperature of the substrate is kept between 200.degree. to 1000.degree. C. during deposition; and the input energy of the microwave is no lower than 2 KW. By this method, uniform and high quality diamond films can be formed.

REFERENCES:
patent: 4571447 (1986-02-01), Prins
patent: 5002899 (1991-03-01), Geis et al.
patent: 5006914 (1991-04-01), Beetz
patent: 5051785 (1991-09-01), Beetz
patent: 5132749 (1992-07-01), Nishibayashi et al.

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