Method of depositing conductors in high aspect ratio apertures u

Details Method of depositing conductors in high aspect ratio apertures u Method of depositing conductors in high aspect ratio apertures u

1993-03-24

1995-03-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437195, 437203, H01L 21441

Patent

active

054016754

ABSTRACT:
A process for sputter deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures.

REFERENCES:
patent: 4116791 (1978-09-01), Zega
patent: 4226082 (1980-10-01), Nishida
patent: 4724060 (1988-02-01), Sakata et al.
patent: 4725566 (1988-02-01), Pham et al.
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4783248 (1988-11-01), Kohlhase et al.
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4824544 (1989-04-01), Mikaliesen et al.
patent: 4849079 (1989-07-01), Cuomo et al.
patent: 4897709 (1990-01-01), Yokoyama et al.
patent: 4920073 (1990-04-01), Wei et al.
patent: 4962414 (1990-08-01), Liou et al.
patent: 4994162 (1991-02-01), Armstrong et al.
patent: 5008217 (1991-04-01), Case et al.
patent: 5026470 (1991-06-01), Bonyhard et al.
patent: 5112693 (1992-05-01), Gilliery
"High Aspect Ratio Hole Filling by Tungsten Chemical Vapor Deposition Combined with a Silicon Sidewall and Barrier Metal for Multilevel Interconnection," K. Suguro et al., J. Appl. Phys., 62(4), 15 Aug. 1987, pp. 1265-1273.
Thin Films Processes, J. L. Vossen et al. (Ed.), Academic Press, 1978, pp. 32-39.
"Collimated Magnetron Sputter Deposition," S. M. Rossnagel et al. J. Vac. Sci. Technology A, vol. 9, No. 2. Apr. 1991, pp. 261-265.
Abstract of presentation by Stephen M. Rossnagel on Oct. 27, 1989 at the American Vacuum Society Conference.

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