Fishing – trapping – and vermin destroying
Patent
1990-07-30
1992-04-28
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437173, 437225, 427 531, 427 541, H01L 2144
Patent
active
051089521
ABSTRACT:
In a method of depositing a tungsten film on a gate oxide by means of laser CVD, using WF.sub.6 and H.sub.2 as raw material gases, the H.sub.2 /WF.sub.6 flow ratio lies within the range 10-100, and the volumeric flow rate of the WF.sub.6, which is defined as the ratio of the flow rate of WF.sub.6 to the total pressure, lies within the range 0.04-0.01 sccm/Pa, so that the supply of WF.sub.6 determines the deposition rate of the W film, whereby a low stress W film is obtained. Accordingly, peeling of the W film at the interface with the SiO.sub.2 film and cracks can be avoided.
REFERENCES:
patent: 4404235 (1983-09-01), Tarng et al.
Journal of Applied Physics 61 (6); Published Mar. 15, 1987; pp. 2365-2373; Akira Shintani, et al.: "Excimer laser initiated chemical vapor deposition of tungesten films on silicon dioxide".
Matsuhashi et al, "Evaluation of Laser CVD Tungsten for Gate Electrode", Jpn. Journal of Applied Physics 2 Letters, vol. 27, No. 11, Nov. 1988.
Adams, A. C., Dielectric and Polysilicon Film Deposition in Sze, S.M. VLSI Technology, McGraw-Hill (1983) p. 94.
Applied Physics Letters, vol. 45, No. 6, Sep. 1984, pp. 623-625, American Institute of Physics, Woodbury, New York, U.S.; T. F. Deutsch et al.: "Comparison of laser-initiated and thermal chemical vapor deposition of tungsten films".
Hearn Brian E.
Holtzman Laura M.
OKI Electric Industry Co., Ltd.
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