Method of depositing a silicon oxide layer

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 81, B05D 306

Patent

active

041683307

ABSTRACT:
This invention pertains to a method of depositing a silicon oxide, such as silicon dioxide, layer on a substrate by utilizing a glow discharge in oxygen and a dielectric precursor having the formula ##STR1## wherein x is an integer of 1 to 4 and each R is independently selected from the group consisting of H, --CH.sub.3, and --C.sub.2 H.sub.5.

REFERENCES:
patent: 3424661 (1969-01-01), Androshuk et al.
patent: 3473759 (1969-10-01), Ehinger et al.

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