Method of depositing a silicon oxide dielectric layer

Details Method of depositing a silicon oxide dielectric layer Method of depositing a silicon oxide dielectric layer

1978-06-06

1981-08-04

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 40, 427124, 427295, 427296, B05D 306

Patent

active

042822688

ABSTRACT:
This invention pertains to a method of depositing a silicon oxide, such as silicon dioxide, dielectric layer on a substrate by utilizing a glow discharge and a dielectric precursor having the formula ##STR1## wherein R.sub.1 is selected from the group consisting of H and --CH.sub.3, R.sub.2 and R.sub.3 are independently selected from the group consisting of H, --CH.sub.3, --OCH.sub.3 and --OC.sub.2 H.sub.5 and R.sub.4 is selected from the group consisting of --OCH.sub.3 and --OC.sub.2 H.sub.5.

REFERENCES:
patent: 3158505 (1964-11-01), Sandor
patent: 3243363 (1966-03-01), Helwig
patent: 3473959 (1969-10-01), Ehinger et al.
patent: 3833408 (1974-09-01), Matthies
Klerer, pp. 1070-1071, Nov. 1961, "A Method . . . Low Temp."
Powell, et al., "Vapor Deposition", Aug. 1, 1966, pp. 604-606.

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