Method of depositing a reflow SiO.sub.2 film

Details Method of depositing a reflow SiO.sub.2 film Method of depositing a reflow SiO.sub.2 film

1995-12-20

1997-11-04

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437238, H01L 21316

Patent

active

056839405

ABSTRACT:
In a method of manufacturing a semiconductor device, a first plasma insulating film having a thickness of 0.1 .mu.m or more is formed on the semiconductor substrate with lower-surface wirings thereon. The semiconductor substrate is moved into a pressure-reduced CVD device, and then an SiH.sub.4 gas and H.sub.2 O.sub.2 are supplied into the pressure-reduced CVD device to react them to each other in a vacuum of 650 Pa or less within the temperature range of -10.degree. C. to +10.degree. C. to form a reflow SiO.sub.2 film having a thickness of 0.4 .mu.m to 1.4 .mu.m on the semiconductor substrate. The semiconductor substrate is put in a vacuum of 6.5 pascal for 30 seconds or more. Thereafter, the semiconductor substrate is put at a high temperature of 300.degree. C. to 450.degree. C. for 120 to 600 seconds. A second plasma insulating film having a thickness of 0.3 .mu.m or more and serving as a cap film is formed on the semiconductor substrate. The crack resistance of the reflow insulating film formed in the above steps is improved, and the flatness of the reflow insulating film is improved.

REFERENCES:
patent: 5190792 (1993-03-01), Blum et la.
patent: 5314724 (1994-05-01), Tsukune et al.
C.D. Dobson et al., "Advanced SiO.sub.2 Planarization Using Silane and H.sub.2 O.sub.2 ", Semiconductor International, pp.85-88 (1994).
M. Matsuura et al., "Novel Self-Planarizing CVD Oxide for Interlayer Dielectric Applications", IEEE, pp. 117-120 (1994).

Affiliated with

Also associated with

Rating

Method of depositing a reflow SiO.sub.2 film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of depositing a reflow SiO.sub.2 film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of depositing a reflow SiO.sub.2 film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1832794