Method of depositing a high-emissivity layer

Details Method of depositing a high-emissivity layer Method of depositing a high-emissivity layer

1981-10-08

1983-11-08

Williams, Howard S.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192P, C23C 1500

Patent

active

044140851

ABSTRACT:
A method of depositing a high-emissivity layer on a substrate comprising RF sputter deposition of a carbide-containing target in an atmosphere of a hydrocarbon gas and a noble gas. As the carbide is deposited on the substrate the hydrocarbon gas decomposes to hydrogen and carbon. The carbon deposits on the target and substrate causing a carbide/carbon composition gradient to form on the substrate. At a sufficiently high partial pressure of hydrocarbon gas, a film of high-emissivity pure carbon will eventually form over the substrate.

REFERENCES:
patent: 3709809 (1973-01-01), Wright et al.
patent: 4309261 (1982-01-01), Harding et al.
J. E. Sundgren, . . . Reactively R.F. Sputtered TiC Films, Thin Solid Films, 80 (1981), pp. 77-83.
G. L. Harding et al., Magnetron-Sputtered Metal Carbide Solar Selective Absorbing Surfacer, J. Vac. Sci. Technol., 16 (3), May/Jun. 1979, pp. 857-862.
G. L. Harding, . . . Metal Carbide Selective Surfaces . . . , Solar Energy Materials, 2 (1980), pp. 469-481.
C. E. Wickersham et al., Reactively Sputter Deposited High-Emissivity Tungsten/Carbon Coatings, J. Vac. Sci. Technol. 18 (2), Mar. 1981, pp. 223-225.

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