Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-08-30
2005-08-30
Goudreau, George A. (Department: 1763)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C438S692000, C438S696000, C438S700000, C438S952000, C438S981000
Reexamination Certificate
active
06936383
ABSTRACT:
By using conventional spacer and etch techniques, microstructure elements, such as lines and contact openings of integrated circuits, may be formed with dimensions that are mainly determined by the layer thickness of the spacer layer. In a sacrificial layer, an opening is formed by means of standard lithography and etch techniques and, subsequently, a spacer layer is conformally deposited, wherein a thickness of the spacer layer at the sidewalls of the opening substantially determines the effective width of the microstructure element to be formed. By using standard 193 nm lithography and etch processes, gate electrodes of 50 nm and beyond can be obtained without significant changes in standard process recipes.
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Hartig Carsten
Mazur Martin
Sulzer Georg
Goudreau George A.
Williams Morgan & Amerson P.C.
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