Method of decreasing contact resistance between a lower elevatio

Details Method of decreasing contact resistance between a lower elevatio Method of decreasing contact resistance between a lower elevatio

1991-10-03

1993-04-06

Maples, John S.

Fishing, trapping, and vermin destroying

437194, 437195, H01L 21441

Patent

active

052003590

ABSTRACT:
A semiconductor processing method for decreasing electrical contact resistance between different elevation electrically conductive layers is disclosed. The method includes applying an aluminum layer atop a partially processed semiconductor wafer, with the aluminum layer having a defined upper surface. The semiconductor wafer with applied aluminum layer is exposed to an oxidizing atmosphere, forming an electrically resistive aluminum oxide at the upper surface of the aluminum layer. An interlayer insulating dielectric material is applied atop the aluminum layer. It is selectively patterned and etched to define a contact opening to the aluminum layer. A layer of titanium metal is applied atop the patterned and etched interlayer dielectric to a preselected thickness. The titanium metal contacts the upper aluminum oxide surface of the aluminum layer within the contact opening. The titanium metal is reacted with the aluminum oxide in the contact to transform aluminum oxide into a less electrically resistive titanium oxide. After application of the titanium metal, a layer of conductive material is applied atop the wafer and thereafter selectively patterned and etched to form a desired the conductive runner.

REFERENCES:
patent: 4673623 (1987-06-01), Gardner et al.
patent: 4937652 (1990-06-01), Okumura et al.
patent: 5081064 (1992-01-01), Inoue et al.

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