Semiconductor device manufacturing: process – Making regenerative-type switching device – Having structure increasing breakdown voltage
Reexamination Certificate
2005-11-01
2005-11-01
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having structure increasing breakdown voltage
C438S638000
Reexamination Certificate
active
06960496
ABSTRACT:
A method of integrated circuit fabrication includes first forming at least one via in an insulting layer, and thereafter forming at least one trench-like structure separately. After a via is formed in an insulating layer, a layer of resist material is formed on the surface of the insulting layer and substantially filled the via. This step is followed by patterning at least one trench-like structure on the resist layer, and the trench-like structure is etched to the desired level. In some other embodiments, at least one trench-like structure is formed before at least one via is formed. An integrated circuit is manufactured by the aforementioned methods.
REFERENCES:
patent: 6033984 (2000-03-01), Schnabel et al.
patent: 6207555 (2001-03-01), Ross
patent: 6300223 (2001-10-01), Chang et al.
patent: 6362524 (2002-03-01), Blish et al.
patent: 6451688 (2002-09-01), Shimpuku
patent: 6537849 (2003-03-01), Tsai et al.
patent: 2003/0218324 (2003-11-01), Kurimoto et al.
patent: 2004/0075174 (2004-04-01), Tamaru et al.
P. Wrschka et al., “Chemical Mechanical Planarization Of Copper Damascene Structures”, Journal of The Electrochemical Society, 147 (2) 706-712 (2000), pp. 706-712.
Jin-Young Kim et al., “The Photoresist Thickness Variation due To Local And Global Topography”, Physica Department, Hanyang University, Korea, The International Society For Optical Engineers 2001.
Steve Lassig et al., “Selective Removal Strategies For Low k Dual Damascene”, Lam Research Corporation, Fremont, CA (Semiconductor Fabtech), pp. 185-190, no date.
Chen Chao-Cheng
Lin Kang-Cheng
Chaudhari Chandra
Duane Morris LLP
Taiwan Semiconductor Manufacturing
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