Method of CVD TiN barrier layer integration

Details Method of CVD TiN barrier layer integration Method of CVD TiN barrier layer integration

1997-02-03

1997-11-18

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437195, H01L 21283

Patent

active

056887183

ABSTRACT:
A method of forming a titanium nitride barrier layer is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer is deposited overlying the semiconductor device structures. An opening is etched through the insulating layer to contact one of the semiconductor device structures. A titanium glue layer is deposited overlying the insulating layer and within the opening. A titanium nitride barrier layer is deposited overlying the titanium glue layer by chemical vapor deposition. A first metal layer is deposited overlying the barrier layer and filling the opening. The first metal layer is etched back leaving the first metal layer only within the opening whereby a portion of the titanium glue layer is exposed. Thereafter, the substrate is annealed to form a titanium nitride protection layer on the exposed portion of the titanium glue layer. Thereafter, the substrate is cleaned wherein the protection layer prevents oxidation of the titanium glue layer. A second metal layer is deposited overlying the first metal layer and patterned to complete the metallization in the fabrication of an integrated circuit device.

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