Method of cutting semiconductor wafer and protective sheet...

Details Method of cutting semiconductor wafer and protective sheet... Method of cutting semiconductor wafer and protective sheet...

2006-06-13

2006-06-13

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S464000, C438S465000

Reexamination Certificate

active

07060531

ABSTRACT:
In a method of cutting a semiconductor wafer in which the semiconductor wafer6is cut by plasma etching, a protective sheet30on which a metallic layer30b, a plasma etching rate of which is low, is formed on one face of an insulating sheet30ais stuck on to a circuit forming face6aby an adhesive layer30c, and plasma is exposed onto an opposite side to the circuit forming face6afrom a mask side which is formed by covering regions except for cutting lines31bwith a resist film31aso as to conduct plasma etching on portions of the cutting lines. Due to the above structure, it is possible to use the metallic layer as an etching stop layer for suppressing the progress of etching. Therefore, fluctuation of the progress of etching can be avoided and heat damage caused on the protective sheet can be prevented.

REFERENCES:
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patent: 5275958 (1994-01-01), Ishikawa
patent: 5972781 (1999-10-01), Wegleiter et al.
patent: 6020217 (2000-02-01), Kuisl et al.
patent: 6221751 (2001-04-01), Chen et al.
patent: 0 807 963 (1997-11-01), None
patent: 2002-93752 (2002-03-01), None
Patent Abstracts of Japan, Yoshi Yasuhiro, “Copper Foil Laminate with Adhesive and Its Manufacturing Method”, Publication No.: 2002-273824, Publication Date: Sep. 25, 2002, 1 page.

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