Fishing – trapping – and vermin destroying
Patent
1985-08-27
1988-01-19
Paschall, M. H.
Fishing, trapping, and vermin destroying
219121LG, 219121LJ, 219121FS, 219121LN, 29584, 437245, B23K 2600
Patent
active
047206209
ABSTRACT:
In a method of cutting metal interconnections in a semiconductor device according to the present invention, a semiconductor wafer (5) which has metal interconnections having a high melting point is placed in an oxygen atmosphere (9) within a chamber (6), and laser beams (4) are irradiated through an optical system (2) and an optical beam positioner (3) on the high melting point metal interconnections while maintaining the interior of the chamber (6) at a vacuum of 1 to 10 mTorr, and introducing oxygen from an oxygen inlet port (7) under a pressure of 1 to 1.5 Torr. to sublimate and cut the high melting point metal interconnections.
REFERENCES:
patent: 3750049 (1973-07-01), Dowley et al.
patent: 4162390 (1979-07-01), Kelly
patent: 4220842 (1980-09-01), Sturmer et al.
patent: 4504726 (1985-03-01), Hosaka et al.
"Laser Targeting Considerations in Redundunt Memory Repair", by D. Smart, R. Reilly, B. Wells et al., Proc. Spie Int. Soc. Opt. Eng. (U.S.A.) vol. 385, Jan. 1983, pp. 97-101.
"Oxygen Cutting", Welding Handbook, Third Edition, pp. 543, 544, 6-1971.
Mitsubishi Denki & Kabushiki Kaisha
Paschall M. H.
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