Method of cutting interconnection pattern with laser and apparat

Details Method of cutting interconnection pattern with laser and apparat Method of cutting interconnection pattern with laser and apparat

1991-05-09

1993-05-04

Albritton, C. L.

Electric heating

Metal heating

By arc

21912183, B23K 2614

Patent

active

052084370

ABSTRACT:
In an interconnection film cutting method and apparatus therefor according to the present invention, a laser beam having a pulse width of 10.sup.-9 second or less is illuminated on a desired portion of the interconnection pattern of a semiconductor device, such as a link used for redundant operation of a defective bit in, for example, a LSI memory, or on a desired portion of the interconnection pattern of a large-scaled interconnection substrate through a transmission type liquid crystal mask in the form of a desired pattern so as to cut the interconnection pattern without damaging a layer disposed below the interconnection pattern.

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patent: 5017755 (1991-05-01), Yahagi et al.
Hartmann, H. D., et al. "Investigations of Nd:YAG Laser Formed Connections and Disconnections of Standard CMOS Double Level Metallizations," Procs. 1990 Int. Conf. Wafer Scale Integration, pp. 298-307. (Provided in English).
Anthony E. Siegman, "Lasers", published by University Science Books, pp. 1041-1113. (Provided in English).
Edward J. Swenson, "Some Present and Future Applications of Laser Processing--An Overview", Solid State Technology, Nov. 1983, pp. 156-158. (Provided in English).
A. A. Bugaev, et al., "Generation of Small-Scale Structural Relief in a Silicon Surface by Picosecond Radiation Pulses", Sov. Tech. Phys. Lett. vol. 12, No. 6, Jun. 1986, pp. 292-293. (Provided in English).

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