Method of customizing integrated circuits by selective secondary

Details Method of customizing integrated circuits by selective secondary Method of customizing integrated circuits by selective secondary

1997-04-25

2000-05-09

Dutton, Brian

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

438128, 438552, 438598, H01L 2166, H01L 2122, H01L 2144, G01R 3126

Patent

active

060603305

ABSTRACT:
A method for fabricating custom integrated circuits includes the steps of 1) patterning the layer to be customized with a standard precision mask to define all possible connections, vias or cut-points, and 2) using a targeting energy beam to select the desired connections, vias or cut-points for customization.
Consequently, the present invention requires no custom mask so that application specific integrated circuits (ASICs) can be produced with lower lead-time and costs when compared to prior methods.
In other embodiments, a non-precision configuration mask may replace the targeting energy beam, where the configuration mask can be made by conventional mask-making techniques or by applying an opaque layer to a mask blank and using a targeting energy beam to selectively remove the desired portions of the opaque areas.

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