Method of crystallizing amorphous silicon using nanoparticles

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

Reexamination Certificate

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C427S553000, C427S596000, C427S189000, C427S197000, C427S199000, C438S798000, C438S487000

Reexamination Certificate

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10417148

ABSTRACT:
A method of crystallizing amorphous silicon, wherein the method includes supplying nanoparticles over a surface of an amorphous silicon layer; intermittently melting nanoparticles that reach the surface of the amorphous silicon layer while supplying the nanoparticles; and cooling the amorphous silicon layer to grow crystals using unmolten nanoparticles as crystal seeds, thereby forming a polysilicon layer. Externally supplied nanoparticles are used as crystal seeds to crystallize an amorphous silicon layer so that large grains can be formed. Accordingly, since the number and size of nanoparticles may be controlled, the size and arrangement of grains may also be controlled.

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