Method of crystallizing amorphous silicon layer

Details Method of crystallizing amorphous silicon layer Method of crystallizing amorphous silicon layer

1998-03-26

2000-09-05

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

117 46, 117903, 117933, C30B 1908

Patent

active

061136891

ABSTRACT:
A method of crystallizing an amorphous silicon layer on a substrate includes the steps of irradiating the amorphous silicon layer by a laser beam positioned over the amorphous silicon layer and having a predetermined repeat rate, while simultaneously partially heating the laser-irradiated part of the amorphous silicon layer upwardly with an RTP, thus crystallizing the amorphous silicon by a laser without damaging the glass substrate by a high temperature.

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