Method of crystal growth of compound semiconductor, compound sem

Details Method of crystal growth of compound semiconductor, compound sem Method of crystal growth of compound semiconductor, compound sem

1999-02-18

2000-11-21

Utech, Benjamin L.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Between different group iv-vi or ii-vi or iii-v compounds...

438 47, 438 94, 117 2, 117 3, H01L 310304

Patent

active

06150677&

ABSTRACT:
A semiconductor layer consisting of Ga.sub.1-x In.sub.x N.sub.y As.sub.1-y and/or GaN.sub.y As.sub.1-y and formed by incorporating nitrogen into a group III-V mixed crystal semiconductor is provided on a GaAs substrate. The hydrogen concentration in the semiconductor is kept at 5.times.10.sup.18 atoms/cm.sup.3 or below.

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