Method of crystal growth of a GaN layer over a GaAs substrate

Details Method of crystal growth of a GaN layer over a GaAs substrate Method of crystal growth of a GaN layer over a GaAs substrate

1997-03-21

2000-08-01

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 94, 117101, 117952, C30B 2514

Patent

active

060961309

ABSTRACT:
A method of crystal growth of a GaN layer with an extremely high surface planarity over a GaAs substrate is provided, wherein a GaAs substrate is heated to a temperature in the range of 600.degree. C. to 700.degree. C. without supplying any group-V element including arsenic to form a Ga-rich surface on the GaAs substrate, before a first source material including N and a second source material including Ga are supplied along with a carrier gas onto a surface of the GaAs substrate to form a GaN layer over the GaAs substrate.

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Fujieda et al; "Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments"; Sep. 1991; pp. 1665-1667; Japanese Journal of Applied Physics.
Strite et al ; "An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy"; Jul./Aug. 1991; pp. 1924-1929; J. Vac. Sci. Technol. B 9 (4).
Nakamura; "InGaN/AlGaN blue-light-emitting diodes"; May/Jun. 1995; pp. 705-710; J. Vac. Science Technology, No. 13, vol. 3.
Guo et al; "Growth of InN films on GaAs (111) and GaP (111) substrates by microwave-excited metalorganic vapor phase epitaxy"; Feb. 6, 1995; pp. 715-717;Applied Phys. Lett. 66 (6).
Okumura et al; "Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy"; pp. 1058-1060; Applied Phys. Lett. 59 (9).

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