Method of crown capacitor rounding by oxidant dipping process

Details Method of crown capacitor rounding by oxidant dipping process Method of crown capacitor rounding by oxidant dipping process

1998-11-04

2000-06-06

Smith, Matthew

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438255, 438396, H01L 2120, H01L 218242

Patent

active

060717904

ABSTRACT:
A method of rounding the bottom electrode top surface of a stack crown capacitor by using chemical oxidation is disclosed. First, forming a bottom electrode of a stack crown capacitor on a semiconductor substrate. Next, oxidizing the bottom electrode top surface by using oxidant dipping. Finally, removing the oxide from the bottom electrode top surface to achieve the goal of surface planarization. Thereafter, repeating the above steps to meet the requirement of surface planarization.

REFERENCES:
patent: 5489557 (1996-02-01), Jolley
patent: 5770095 (1998-06-01), Sasaki et al.

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