Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2011-08-02
2011-08-02
Lee, Hsien Ming (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S717000, C430S005000, C257SE23179
Reexamination Certificate
active
07989303
ABSTRACT:
In an embodiment, a method of creating an alignment mark on a substrate includes forming a plurality of lines segmented into electrically conducting line segments and space segments, thereby forming spaces between the lines to form a macroscopic structure in a first layer of the substrate, creating a plurality of electrically conducting trenches in a second layer of the substrate, and arranging the plurality of trenches to be in electrical contact with the line segments and overlapping the space segments at least partially.
REFERENCES:
patent: 7330261 (2008-02-01), Van Haren et al.
patent: 2005/0064676 (2005-03-01), Tobioka et al.
patent: 2007/0076205 (2007-04-01), Schulz
patent: 2008/0002213 (2008-01-01), Weiss
ASML Netherlands B.V.
Lee Hsien Ming
Sterne Kessler Goldstein & Fox P.L.L.C.
LandOfFree
Method of creating an alignment mark on a substrate and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of creating an alignment mark on a substrate and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of creating an alignment mark on a substrate and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2631321