Method of creating an alignment mark on a substrate and...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature

Reexamination Certificate

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C438S717000, C430S005000, C257SE23179

Reexamination Certificate

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07989303

ABSTRACT:
In an embodiment, a method of creating an alignment mark on a substrate includes forming a plurality of lines segmented into electrically conducting line segments and space segments, thereby forming spaces between the lines to form a macroscopic structure in a first layer of the substrate, creating a plurality of electrically conducting trenches in a second layer of the substrate, and arranging the plurality of trenches to be in electrical contact with the line segments and overlapping the space segments at least partially.

REFERENCES:
patent: 7330261 (2008-02-01), Van Haren et al.
patent: 2005/0064676 (2005-03-01), Tobioka et al.
patent: 2007/0076205 (2007-04-01), Schulz
patent: 2008/0002213 (2008-01-01), Weiss

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