Method of creating a predefined internal pressure within a...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S456000

Reexamination Certificate

active

07410828

ABSTRACT:
A method of creating a predefined internal pressure within a cavity of a semiconductor device, the method including providing the semiconductor device, the semiconductor device including a semiconductor oxide area which is continuously arranged between the cavity of the semiconductor device and an external surface of the semiconductor device, exposing the semiconductor device to an ambient atmosphere with a noble gas at a first temperature for a predetermined time period, and setting a second temperature, which is different from the first, after the predetermined time period has expired, the semiconductor oxide area exhibiting a higher permeability for the noble gas at the first temperature than at the second temperature.

REFERENCES:
patent: 4975390 (1990-12-01), Fujii et al.
patent: 5323051 (1994-06-01), Adams et al.
patent: 5872309 (1999-02-01), Pinter
patent: 5985412 (1999-11-01), Gosele
patent: 6467354 (2002-10-01), Allen
patent: 2004/0057043 (2004-03-01), Newman et al.
patent: 2004/0077117 (2004-04-01), Ding et al.
patent: 2005/0230708 (2005-10-01), Riechenbach et al.
patent: 3743080 (1988-07-01), None
patent: 19648759 (1998-05-01), None
patent: 19651384 (1998-06-01), None
patent: 19739961 (1999-04-01), None
patent: 19961578 (2001-06-01), None
patent: 1210447 (1960-03-01), None
Shelby, J. Helium Migration in Glass-forming Oxides. J. Appl. Phys. vol. 43, No. 7. Jul. 1972.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of creating a predefined internal pressure within a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of creating a predefined internal pressure within a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of creating a predefined internal pressure within a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3993420

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.