Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system – Circuit simulation
Reexamination Certificate
2006-09-07
2009-06-02
Frejd, Russell (Department: 2128)
Data processing: structural design, modeling, simulation, and em
Simulating electronic device or electrical system
Circuit simulation
C703S002000, C716S030000, C716S030000, C438S014000
Reexamination Certificate
active
07542891
ABSTRACT:
Roughly described, standard SPICE models can be modified by substituting a different stress analyzer to better model the stress adjusted characteristics of a transistor. A first, standard, stress-sensitive, transistor model is used to develop a mathematical relationship between the first transistor performance measure and one or more instance parameters that are available as inputs to a second, stress-insensitive, transistor model. The second transistor model may for example be the same as the first model, with its stress sensitivity disabled. Thereafter, a substitute stress analyzer can be used to determine a stress-adjusted value for the first performance measure, and the mathematical relationship can be used to convert that value into specific values for the one or more instance parameters. These values are then provided to the second transistor model for use in simulating the characteristics of the particular transistor during circuit simulation.
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Lin Xi-Wei
Moroz Victor
Pramanik Dipankar
Frejd Russell
Haynes Beffel & Wolfeld LLP
Synopsys Inc.
Wolfeld Warren S.
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