Method of correcting pattern critical dimension of photomask

Details Method of correcting pattern critical dimension of photomask Method of correcting pattern critical dimension of photomask

2011-03-29

2011-03-29

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07914951

ABSTRACT:
A method of correcting a pattern critical dimension of a photomask includes forming a phase shift layer and a light blocking pattern on a substrate, measuring a critical dimension (CD) of the light blocking pattern, and forming a negative resist pattern that has a relatively smaller CD than the CD of the light blocking pattern on the light blocking pattern, and correcting the CD of the light blocking pattern by etching the light blocking pattern exposed by the negative resist pattern. The method may further include forming a phase shift pattern by etching the phase shift layer exposed by the corrected light blocking pattern and the negative resist pattern as an etch mask, and removing the negative resist pattern and the corrected light blocking pattern.

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