Method of correcting optical proximity effect of contact holes

Details Method of correcting optical proximity effect of contact holes Method of correcting optical proximity effect of contact holes

2006-05-30

2006-05-30

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07052810

ABSTRACT:
A method of correcting optical proximity effect of contact holes. Corresponding relations between mask critical dimensions (mCDs) and photoresist critical dimensions (pCDs) for each pitch (d) are formed. Correction of each mCD for each combination of pCDs and pitches is determined based on the corresponding relations. The correction is used first to correct each contact hole of a processing mask pattern. The first corrected contact hole of the processing mask pattern is corrected again to a square having the same area as the first corrected contact hole and the same center as the uncorrected contact hole.

REFERENCES:
patent: 6420077 (2002-07-01), Chen et al.

Affiliated with

Also associated with

Rating

Method of correcting optical proximity effect of contact holes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of correcting optical proximity effect of contact holes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of correcting optical proximity effect of contact holes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3646507