Method of correcting for pattern run out

Details Method of correcting for pattern run out Method of correcting for pattern run out

2011-01-04

2011-01-04

Meeks, Timothy H (Department: 1715)

Coating processes

Nonuniform coating

Mask or stencil utilized

C427S272000, C427S468000, C427S510000, C427S002110, C427S008000, C216S012000, C216S041000, C216S045000, C216S046000, C216S047000, C216S048000, C216S049000, C216S050000, C216S051000, C438S942000, C438S975000

Reexamination Certificate

active

07862859

ABSTRACT:
A method of correcting for pattern run out in a desired pattern in directional deposition or etching comprising the steps ofproviding a test substrate;providing a stencil of known thickness on the test substrate;providing a stencil pattern extending through the stencil to the test substrate.exposing the test substrate through the stencil to a source of directional deposition or etching;comparing the stencil pattern to the pattern on the substrate at a plurality of points along at least one direction to determine pattern run out at said points;fitting the measured pattern run out as a function of position to a function of the formin-line-formulae description="In-line Formulae" end="lead"?ΔX=MX+Cin-line-formulae description="In-line Formulae" end="tail"?where ΔX=pattern run out, X=position on the substrate, M=Magnification and C=translational offset;providing a further substrate at a known position relative to the first;providing a further stencil of known thickness;adjusting the magnification to allow for the difference in stencil thickness between the test stencil and the further stencil;adjusting the transitional offset to allow for the difference in position of the test substrate and further substrate along said direction;providing a desired pattern to be deposited or etched on the further substrate;correcting each point of the desired pattern by the inverse of the determined pattern run out at the point;providing the corrected desired pattern on this further stencil, the pattern extending through the further stencil to the substrate;exposing the further substrate through the further stencil to the directional source of deposition or etching.

REFERENCES:
patent: 4347001 (1982-08-01), Levy et al.
patent: 4776868 (1988-10-01), Trotter et al.
patent: 6168832 (2001-01-01), Boucher
patent: 6867109 (2005-03-01), Hong et al.
patent: 6208942 (1994-07-01), None
patent: 9275062 (1997-10-01), None
Search Report for U.S. Appl. No. 11/756,870, filed Jun. 1, 2007.

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