Method of correcting a mask layout

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S030000

Reexamination Certificate

active

06974650

ABSTRACT:
A method of correcting a mask layout is provided. The mask layout includes a plurality of element patterns. An inspection program is executed to classify the element patterns of the mask layout into a plurality of element pattern types according to a pattern density of the element patterns. Following this, each of the element pattern types is corrected so as to prevent a plasma micro-loading effect.

REFERENCES:
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 5916716 (1999-06-01), Butsch et al.
patent: 6120953 (2000-09-01), Lin
patent: 6475684 (2002-11-01), Ki
patent: 6586146 (2003-07-01), Chang et al.

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