Method of controlling threshold voltage of NROM cell

Details Method of controlling threshold voltage of NROM cell Method of controlling threshold voltage of NROM cell

2006-05-30

2006-05-30

Elms, Richard (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S200000, C365S185280, C257S183100

Reexamination Certificate

active

07054192

ABSTRACT:
A method of two-sided asymmetric programming with a one-sided read for a Nitride Read Only Memory (NROM) cell with different quantity of stored charges uses the different interaction of the two bits to control the operation window of the threshold voltage. Due to the increase of the threshold voltage operation window of a NROM cell, four, eight, and sixteen memory states of a NROM cell can be achieved through the combination of the left bit, the right bit, the quantity of charge, and the charge position of its two bits.

REFERENCES:
patent: 6011725 (2000-01-01), Eitan
patent: 6487114 (2002-11-01), Jong et al.
patent: 2003/0117861 (2003-06-01), Maayan et al.
patent: 2004/0017693 (2004-01-01), Kuo et al.
patent: 2004/0222437 (2004-11-01), Avni et al.
T. Y. Chen et al., “A True Single-Transistor Oxide-Nitride-Oxide EEPROM Device,” IEEE Electron Device Letters, vol. EDL-8, No. 3, Mar. 1987, pp. 93-95.

Affiliated with

Also associated with

Rating

Method of controlling threshold voltage of NROM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of controlling threshold voltage of NROM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of controlling threshold voltage of NROM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3630249