Method of controlling the switching DI/DT and DV/DT of a MOS-gat

Details Method of controlling the switching DI/DT and DV/DT of a MOS-gat Method of controlling the switching DI/DT and DV/DT of a MOS-gat

1997-10-08

2000-10-03

Paladini, Albert W.

Electrical transmission or interconnection systems

Switching systems

Condition responsive

326 83, 327108, 327365, 327380, 327381, 327419, 327440, H03K 1700

Patent

active

061277460

ABSTRACT:
The switching di/dt and switching dv/dt of a MOS gate controlled ("MOS-gated") power device are controlled by respectively controlling the voltage and current waveforms. Open loop control of the turn-on of the MOS-gated device is provided by coupling a common terminal of a current generator circuit, which provides a current to the gate of the MOS device, to a first resistor for controlling the switching dv/dt. At the detection of a negative dv/dt, the common terminal of the current generator circuit is then coupled to a second resistor for controlling the switching di/dt. The first and second resistors are, in turn, coupled to the source terminal fo the MOS-gated device. An analogous operation provides turn-off control of the MOS-gated power device. Closed loop control is also provided by measuring the switching dv/dt and the switching di/dt which are then fed back to the circuit to control the current supplied to the gate of the MOS-gated device. The switching di/dt can be measured by measuring the voltage difference across the length of a calibrated wire bond having a predetermined length and diameter.

REFERENCES:
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International Rectifier Application Note AN-944: "A New Gate Charge Factor Leads to Easy Drive Design for Power MOSFET Circuits" by B.R. Pelly--Chapter 7.
IGBT Fault Current Limiting Circuit by R. Chokhawala and G. Castino, IR IGBT Data Book-3 pp. E-127-E-134.

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