Method of controlling the modeling of the well energy band profi

Details Method of controlling the modeling of the well energy band profi Method of controlling the modeling of the well energy band profi

1986-06-09

1987-06-09

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29569L, 357 16, 372 45, H01L 2122

Patent

active

046718303

ABSTRACT:
The method of controlling the modeling of the well energy band profile by interdiffusion comprises at least one thin disordering component layer contiguous with a surface of the quantum well layer and including a high content of a disordering component therein compared to the level of content thereof in semiconductor layers immediately adjacent thereto. The disordering components are Al and Ga in the GaAs/GaAlAs regime.

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L. L. Chang et al., "Interdiffusion Between GaAs & AlAs", APL, vol. 29(3), pp. 138-141 (Aug. 1, 1976).
W. D. Laidig et al., "Disorder of an AlAs-GaAs Superlattice by Impurity Diffusion", APL, vol. 38(10), pp. 776-778 (May 15, 1981).
L. W. Kirchoefer et al., "Zn Diffusion & Disordering of an AlAs-GaAs Superlattice Along its Layers", JAP, vol. 53(1), pp. 766-768 (Jan. 1982).
M. D. Camras et al., "Disorder of AlAs/GaAs Superlattices by the Implantation & Diffusion of Impurities", Proceedings of the International Symposium on GaAs & Related Compounds"; Albuquerque, New Mexico, 1982.

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