Coating processes – Coating by vapor – gas – or smoke – Metal coating
Reexamination Certificate
2001-10-16
2004-04-13
Meeks, Timothy (Department: 1762)
Coating processes
Coating by vapor, gas, or smoke
Metal coating
C427S252000, C427S255280
Reexamination Certificate
active
06720031
ABSTRACT:
FIELD OF THE INVENTION
This invention relates to MOCVD deposition of interlayer metal conductors in integrated circuit fabrication, and specifically to a technique for providing superior adhesion of a copper thin film to a barrier metal.
BACKGROUND OF THE INVENTION
The use of water in CVD of copper is known from Gelatos, et al, “
Chemical vapor deposition of copper from Cu+
1
precursors in the presence of water vapor
”, Appl. Phys. Lett. 63(20), 1993, pp. 2842-2844, wherein a method of adding water vapor to Cu(hfac)(tmvs), where hfac=hexafluoroacetylaceton and tmvs=trimethylvinylsilane, improves the deposition rate of copper and decrease the resistivity of the deposited copper thin films. Hochberg, et al., disclose a method of adding water to a Cu(hfac)(tmvs) precursor in the form of hexafluoroacetylacetone (hfac) dihydrate (H(hfac)(2H
2
O), in “
Chemical Additives For Improved Copper CVD Processing Using
(
hfac
)
Cu
(
tmvs
)”, Advanced Metallization for ULSI Applications, 1994, wherein the stability of the precursor is improved and the deposition rate of copper thin films are increased, however, the conductivity of the copper thin films is not improved, and the formed copper thin films have a rough texture.
Jain, et al., “
Chemical Vapor Deposition of Copper from
(
hfac
)
CuL
(
L=tmvs and
2-
butyne
)
in the Presence of Water, Methanol and Dimethyl Ether
”, Chem. Mater., 8, pp 1119-1127, 1996, disclose a method of adding water vapor to (hfac)Cu(tmvs). The deposition rate of the copper precursor is improved, but the resistivity of the deposited copper is poor.
U.S. Pat. No. 5,744,192, granted Apr. 28, 1998 to Nguyen et al., for
Method of using water vapor to increase the conductivity of cooper deposited with Cu
(
hfac
)
TMVS
, describes a techniques of simultaneously injecting water and a copper precursor, wherein the water is vaporized into vaporized copper precursor prior to introduction of either the water or precursor into a CVD chamber. This is the currently method of injecting water along with copper precursor during CVD of copper films.
SUMMARY OF THE INVENTION
A method of chemical vapor deposition (CVD) of copper films includes preparing a substrate, including forming structures thereon have a barrier metal exposed surface; placing the prepared substrate into a CVD chamber; heating the substrate to a temperature of between about 200° C. and 250° C.; introducing a water flow in a carrier gas for at least one minute; stopping the water flow; and starting the flow of copper precursor.
An object of the invention is to provide a method of superior trench filling and step covering by copper films when deposited over barrier metals.
This summary and objectives of the invention are provided to enable quick comprehension of the nature of the invention. A more thorough understanding of the invention may be obtained by reference to the following detailed description of the preferred embodiment of the invention in connection with the drawings.
REFERENCES:
patent: 5744192 (1998-04-01), Nguyen et al.
patent: 6355562 (2002-03-01), Charneski et al.
Article by Gelatos et al., entitled “Chemical Vapor Deposition of Copper from Cu+1 Precursors in the Presence of Water Vapor”, published in Appl. Phys. Lett. 63(20), 1993, pp. 2842-2844.
Article by Norman, et al., entitled “Chemical Additives For Improved Copper CVD Processing”, published in Thin Solid Films 262 (1995) pp. 46-51, 1994.
Article by Jain et al., entitled “Chemical Vapor Deposition of Copper from (hfac)CuL(L=tmvs and 2-butyne) in the Presence of Water, Methanol and Dimethyl Ether”, published in Chem. Mater., 8, pp. 1119-1127, 1996.
Evans David Russell
Hsu Sheng Teng
Pan Wei
Krieger Scott C.
Meeks Timothy
Rabdau Matthew D.
Ripma David C.
Sharp Laboratories of America Inc.
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