Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2005-08-30
2005-08-30
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S005000, C438S014000, C438S692000, C216S084000, C216S088000, C216S089000
Reexamination Certificate
active
06936480
ABSTRACT:
An improved CMP controller allows the calculation of the polish time required for removing a patterned layer stack to a desired final thickness, wherein the initial layer thickness of each layer contained in the layer stack is employed. Moreover, a topography factor characterizing the surface structure of the layer stack and a selectivity characterizing the ratio of removal rates between adjacent material layers are used. Furthermore, a state variable of the controller represented by the removal rate of one of the layers may periodically be updated on the basis of the previously calculated polish time and a measurement value of the finally obtained layer thickness. The improved controller is particularly advantageous in the CMP process for STI isolation structures, in which the final thickness of a CMP stop layer, having a significantly reduced removal rate compared to the overlying dielectric layer, has to be precisely controlled.
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Lingel Stefan
Räbiger Jan
Wollstein Dirk
Advanced Micro Devices , Inc.
Chen Eric B.
Norton Nadine G.
Williams Morgan & Amerson P.C.
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