Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Patent
1996-02-27
1999-06-15
Dang, Trung
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
438239, 438243, 438245, 438388, H01L 2120
Patent
active
059131250
ABSTRACT:
A method of providing a predetermined level and state of stress in a film deposited on a surface of a substrate. In one embodiment, a layer of crystalline material is deposited on a surface of a substrate and then a layer of amorphous material is deposited on the layer of crystalline material. Then, the layers are heated, causing the amorphous material to crystallize. Such crystallization reduces, or even changes the state of, stress in the amorphous layer, which in turn alters the forces applied by the layer to adjacent regions of the substrate. The method may be used for filling a deep-trench capacitor of the type used in trench-storage DRAMs.
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Brouillette Donald Walter
Krywanczyk Timothy Charles
Lasky Jerome Brett
Mohler Rick Lawrence
Rauscher Wolfgang Otto
Dang Trung
International Business Machines - Corporation
Shkurko Eugene I.
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