Method of controlling silicon wafer etching rates-utilizing a di

Compositions – Etching or brightening compositions

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156647, 156662, H01L 21302, C09K 1300

Patent

active

041558669

ABSTRACT:
A method for controlling the etch rate of a quaternary etchant comprising ethylene diamine, water, pyrocatechol and a diazine. The etching rate is catalyzed and controlled by controlling the amount of the diazine present in the etchant. A method for the controlled etching of silicon is also disclosed.

REFERENCES:
patent: 3936332 (1976-02-01), Matsumoto et al.
patent: 4113551 (1978-09-01), Bassous et al.
Bassous, "Controlled . . . Silicon" IBM Technical Disclosure Bulletin, vol. 19 No. 9 (Feb. 1977) p. 3623.
Bohg, "Ethylene- . . . Silicon" Journal of Electrochemical Society, vol. 118, No. 2 (Feb 1971) pp. 401-403.

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