Coating processes – Coating by vapor – gas – or smoke
Patent
1996-06-25
1998-06-09
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
4272552, C23C 1634
Patent
active
057630070
ABSTRACT:
Chemical vapor deposition of titanium nitride thin films is based upon the gas phase kinetics of the reaction of a metal-amido precursors, e.g. tetrakis dimethylamido titanium (Ti(NMe.sub.2).sub.4), which when reacted with a reagent, for example, NH.sub.3 produces in a transamination reaction, an amine, e.g. HNMe.sub.2, as a direct product, which when added to the reaction in excess, inhibits the reversible transamination reaction so as to slow and control the rate of reaction to produce titanium nitride films having conformal step coverage over sub-micron integrated circuit features.
REFERENCES:
Weiller, Chem. Mater., vol. 6, No. 3, (1994) pp. 260-261 (no month).
Weiller, J. Am. Chem. Soc., 118, May, 1996, pp. 4975-4983.
Weiller, Chem. Mater., vol. 7, No. 9, Sep., 1995, pp. 1609-1611.
"Chemical Vapor Deposition of Titanium, Zirconium, and Hafnium Nitride Thin Films", R. Fox, R.G. Gordon, D.M. Hoffman American Chemical Society, pp. 1138-1148, 1991 (No Month).
"Flow Tube Kinetics of Gas-Phase CVD Reactions", B.H. Weiller Mat. Res. Soc. Symp., Proc., vol. 334, pp. 379-384, 1994 (no month).
"Low Temperature Metal-Organic Chemical Vapor Deposition of Advanced Barrier Layers for the Microelectronics Industry", I.J. Raijmakers Thin Solid Films, vol. 247, pp. 85-93, 1994 (no month).
Infrared Studies of the Surface & Gas Phase Reactions Leading to the Growth of Titanium Nitride Thin Films From Tetrakis (Dimethylamido) Titanium and Ammonia J. Electrochem. Soc., vol. 139, No. 12, pp. 3603-3609, Dec. 1992, Dubois et al.
"Investigations of the Growth of TiN Thin Films form Ti (NMe.sub.2).sub.4 and Ammonia", J.A. Prybyla, C.M. Chiang., and L.H. Dubois J. Electorchem. Soc., vol. 140, No. 9, pp. 2695-2702 Sep. 1993.
Low Temperature CVD of TiN From Ti (NR.sub.2).sub.4 and HN.sub.3, FTIR Studies of the Gas-Phase Chemical Reactions, B. H. Weiller Mat. Res. Soc. Symp. Proc., vol. 335, pp. 159-164, 1994 (no month).
"Metalorganic Chemical Vapor Deposition of TiN Films for Advanced Metallization", G.S. Sandhu, S.G. Meikle, and T.T. Doan Appl. Phys. Lett., vol. 62, No. 3, pp. 240-242, Jan. 1993.
Flow-Tube Kinetics of Gas-Phase Chemical Vapor Deposition Reactions: TiN from Ti (NMe.sub.2).sub.4 and HN.sub.3., B.H. Weiller Chemical of Mat. vol. 6, pp. 260-261, 1994 (No Month).
"Metallo-Organic Compounds, Containing Metal-Nitrogen Bonds, Part I. Some Dialkylamino-Derivatives of Titanium and Zirconium", D.C. Bradley, I.M. Thomas J. Chem. Soc., pp. 3578-1861, 1960 (no month).
"Low Temperature Preparation of Gallium Nitride Thin Films", R.G. Gordon, D.M. Hoffman, and U. Riaz Mat. Res. Soc. Symp. Proc., vol. 242, pp. 445-450, 1992 (no month).
"Low-Temperature Atmospheric Pressure Chemical Vapor Deposition of Polycrystalline Tin Nitride Thin Films", R.G. Gordon, D.M. Hoffman, and U. Riaz Chem. Mater. vol. 4, No. 1, pp.68-71, 1992 (no month).
"Chemical Vapor Deposition of Aluminum Nitride Thin Films", R.G. Gordon, U. Riaz, and D.M. Hoffman J. Mater. Res. vol. 7, No. 7, pp. 1679-1684, Jul. 1992.
"Chemical Vapor Deposition of Vanadium, Niobium and Tantalum Nitride Thin Films", R.M. Fix, R.G. Gordon, and D.M. Hoffman Chem. Mater. vol. 5, pp. 614-619, 1993 (no month).
Beck Shrive
Meeks Timothy
Reid Derrick Michael
The Aerospace Corporation
LandOfFree
Method of Controlling Reactions between tetrakis dialkylamine ti does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of Controlling Reactions between tetrakis dialkylamine ti, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of Controlling Reactions between tetrakis dialkylamine ti will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2196319